Dr Sourabh Khandelwal from the Department of Engineering has developed a model for a GaN (gallium nitride) transistor that has been adopted as an international standard.

Silicon transistors are a critical part of modern electronics. There’s a few million of them in your smartphone alone, but owing to their fundamental material limitations they’re extremely inefficient for emerging applications.

GaN transistors are emerging as a go-to technology for use in future applications like 5G communications, sensing electronics in autonomous cars, and compact converters for renewable energy. They’re more efficient than silicon, meaning they’ll use less power and can also be made smaller than silicon transistors. Continue reading Transistor model sets the standard →